band switching diode 1ss390 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) high frequency switching ? features 1)ultra small mold type. (emd2) 2)high reliability ? construction silicon epitaxial ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit i f ma v r v tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions forward voltage v f - - 1.0 v i f =10ma reverse current i r - - 10 na v r =25v ct - - 1.2 pf v r =6v , f=1mhz rf - - 0.9 ? i f =2ma , f=100mhz , rl=100 ? parameter capacitance between terminals forward operating resistance storage temperature -55 to +125 reverse voltage (dc) 35 junction temperature 125 parameter limits forward current (dc) 100 emd2 0.8 1.7 0.6 rohm : emd2 jeita : sc-79 jedec :sod-523 0.120.05 0.60.1 0.30.05 0.80.05 1.20.05 1.60.1 0.950.06 0 4.00.1 4.00.1 2.00.05 1.50.05 3.50.05 1.750.1 8.00.15 0.20.05 0.760.05 1.260.05 0 0.5 0.6 2.00.05 1.30.06 0 2.450.1 ??? 0.2 1.55 0.05 2.40 0.05 0.90 0.05 0.75 0.05 1.25 ? 0.06 ? 0 1.25 ? 0. 06 ? 0 empty pocket 1/3 2011.03 - rev.d data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
1ss390 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 810 820 830 840 850 860 forward voltagevf(v) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) ambient temperature:ta() derating curve(io-ta) average rectifide forward current:io(a) 0.01 0.1 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 ta=-25 ta=125 ta=75 ta=25 0.0001 0.001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 35 ta=125 ta=-25 ta=25 ta=75 0.1 1 10 0102030 f=1mhz ave:840.2mv ta=25 if=100ma n=30pcs ta=25 vr=25v n=30pcs ave:0.0145na 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ave:0.849pf ta=25 vr=6v f=1mhz n=10pcs 0 5 10 15 20 ave:4.95a 8.3ms ifsm 1cyc 0.1 1 10 100 1 10 100 8.3ms ifsm 1c y c 8.3ms 0.1 1 10 100 0.1 1 10 100 t ifsm 1 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time 0 0.1 0.2 0 0.05 0.1 0.15 0.2 sin(?180) d=1/2 dc 0 0.05 0.1 0.15 0.2 0255075100125 t tj=125 d=t/t t vr io vr=40v 0a 0v sin(?180) dc d=1/2 forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics 2011.03 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
1ss390 average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) electrostatic discharge test esd(kv) esd dispersion map 0 2 4 6 8 10 ave:0.96kv c=200pf r=0 c=100pf r=1.5k 0 0.05 0.1 0.15 0.2 0 25 50 75 100 125 ave:5.45kv t tj=125 d=t/t t vr io vr=40v 0a 0v sin( ?180) dc d=1/2 2011.03 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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